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    Vertical cavity surface emitting lasers based on vertically coupled quantum dots

    Ledentsov, N.N. / Ustinov, V.M. / Lott, J.A. et al. | IEEE | 1997

    Ultrafast gain recovery dynamics of the excited state in InGaAs quantum dot amplifiers

    Schneider, S. / Woggon, U. / Borri, P. et al. | IEEE | 2005
    The gain dynamics in electrically-pumped InGaAs quantum dot amplifiers at 300 K is measured to be in the subpicosecond range for both ...

    Ultrafast dynamics in InAs/GaAs quantum dot amplifiers

    Borri, P. / Langbein, W. / Hvam, J.M. et al. | IEEE | 1999
    InAs/GaAs QD amplifiers at room temperature. The samples consist of 3 stacked layers of InAs/InGaAs/GaAs quantum dots. ...

    The impact of strain on the spontaneous emission from self assembled quantum dot laser diodes

    Tan, K.T. / Wonfor, A. / Penty, R.V. et al. | IEEE | 2003
    The effect of strain in laser diodes with pyramidal quantum dots has been experimentally studied and theoretically modelled. Strongly ...

    Semiconductor optical amplifiers near 1.3 /spl mu/m based on InGaAs/GaAs quantum dots

    Laemmlin, M. / Bimberg, D. / Uskov, A.V. et al. | IEEE | 2004
    We report fiber-to-fiber gain > 8 dB of a quantum dot amplifier equivalent to a net gain of 0.4 dB/(mm*QD layer). This is to our knowledge ...

    Room temperature quantum dot lasers: From basic experiments to first device oriented structures

    Zaitsev, S.V. / Gordeev, N.Yu. / Ustinov, V.M. et al. | IEEE | 1996
    Summary form only given. Due to increasing of the quantum dot (QD) layer number up to 10 the threshold current density was reduced at RT ...

    Room Temperature Multi-stacked Quantum Dot Lasers Basic Components Of Threshold Current Density

    Zaitsev, S.V. / Georgievski, A.M. / Gordeev, N.Yu. et al. | IEEE | 1997

    Quantum dots for lasers, amplifiers and computing

    Bimberg, D. | IEEE | 2003
    Quantum dots (QDs) enable novel photonic devices like edge and surface emitting lasers, or amplifiers with dramatically improved properties ...

    Quantum dot photonics: edge emitter, amplifier and VCSEL

    Hopfer, F. / Kuntz, M. / Lammlin, M. et al. | IEEE | 2005

    Prospects for ultrafast optical switching based on quantum dot semiconductor optical amplifiers in nonlinear interferometers

    Uskov, A.V. / O'Reilly, E.P. / Manning, R.J. et al. | IEEE | 2004
    It is shown that interferometers containing quantum-dot semiconductor optical amplifiers can be effective for ultrafast cross-phase ...

    Properties of InGaAs quantum dot saturable absorbers in monolithic mode-locked lasers

    Thompson, M.G. / Marinelli, C. / Chu, Y. et al. | IEEE | 2004
    Saturable absorbers properties are characterised in monolithic mode-locked InGaAs quantum dot lasers. We analyse the impact of weak quantum ...

    Progress in Epitaxial Growth and Performance of Quantum Dot and Quantum Wire Lasers

    Ledentsov, N.N. / Bimberg, D. / Alferov, Z.I. | British Library Online Contents | 2008

    Patterning effects in quantum dot amplifiers characterized through pump probe spectroscopy using two pump pulses

    Berg, T.W. / van der Poel, M. / Laemmlin, M. et al. | IEEE | 2004
    Patterning effects at ultrahigh bitrates in quantum dot amplifiers are investigated by a novel experimental technique. Slow carrier ...

    Overcoming gain saturation in InAs/GaAs quantum dot lasers

    Schmidt, O.G. / Kirstaedter, N. / Mao, M.-H. et al. | IEEE | 1996
    By stacking multiple layers of InAs-GaAs quantum dots gain saturation in zero-dimensional laser structures is overcome. The effect of ...

    Multiple stacks of InAs/InGaAs quantum dots for GaAs-based 1.3 /spl mu/m vertical cavity surface emitting lasers

    Lott, J.A. / Ledentsov, N.N. / Kovsh, A.R. et al. | IEEE | 2003
    In this paper we report on the design and performance of GaAs-based, quantum dot vertical cavity surface emitting lasers (VCSELs) that emit ...

    Linewidth enhancement factor in InGaAs quantum dot amplifiers

    Schneider, S. / Borri, P. / Langbein, W. et al. | IEEE | 2003

    Investigation of high repetition rate mode-locked quantum dot lasers

    Tan, K.T. / Thompson, M.G. / Marinelli, C. et al. | IEEE | 2003
    Passive mode-locking of quantum dot laser at 18 GHz is reported for the first time. The generation of reduced jitter, Fourier transform ...

    High performance long-wavelength QD diode lasers on GaAs substrates

    Maleev, N.A. / Kovsh, A.R. / Zhukov, A.E. et al. | IEEE | 2002
    Long-wavelength GaAs-based quantum dot laser diodes with external differential efficiency of 84...88% combined with low internal loss and ...

    High bandwidth modulation of multiple contact 1.3 micron quantum dot lasers

    Wonfor, A. / Tan, K.T. / Ribbat, C. et al. | IEEE | 2002
    By forming twin contacts on a 1300 nm quantum dot laser, a small signal modulation bandwidth of 4.6 GHz is achieved. This bandwidth value ...

    GaAs-Based InAs/InGaAs Quantum Dot Vertical Cavity and Vertical External Cavity Surface Emitting Lasers Emitting Near 1300 nm

    Lott, J.A. / Kovsh, A.R. / Ledentsov, N.N. et al. | IEEE | 2005
    quantum dot active regions grown on GaAs substrates that emit over 1 mW continuous wave peak power at room temperature are demonstrated. ...

    Coulomb Damped Relaxation Oscillations in Semiconductor Quantum Dot Lasers

    Malic, E. / Kwang J. Ahn, / Bormann, M.J.P. et al. | IEEE | 2006

    Bandgap-tuned In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dot lasers

    Kim, S. / Bryce, A.C. / Smith, C.J.M. et al. | IEEE | 2004
    Bandgap tuned quantum dot lasers were fabricated and their performance compared to lasers fabricated from as-grown material. The output ...

    An analog of free carrier plasma component of carrier induced refractive index in quantum dot lasers

    Uskov, A.V. / O'Reilly, E.P. / McPeake, D. et al. | IEEE | 2004
    The carrier-induced refractive index in quantum dot (QD) structures due to optical transitions from QD levels to continuum states is ...

    Alpha parameter in quantum-dot amplifier under optical and electrical carrier modulation

    van der Poel, M. / Birkedal, D. / Hvam, J. et al. | IEEE | 2004
    Alpha parameter of a long-wavelength quantum-dot amplifier near 1.3 /spl mu/m is measured to be below one even with saturated gain. A ...

    35 GHz passive mode-locking of InGaAs/GaAs quantum dot lasers at 1.3 /spl mu/m with Fourier-limited pulses

    Kuntz, M. / Fiol, G. / Laemmlin, M. et al. | IEEE | 2004
    We report 35 GHz passive mode-locking and 20 GHz hybrid mode-locking of quantum dot (QD) lasers at 13 /spl mu/m. Our investigations show ...

    20 GHz colliding pulse mode-locking of InGaAs quantum dot lasers

    Thompson, M.G. / Marinelli, C. / Zhao, X. et al. | IEEE | 2005
    Colliding pulse mode-locking is demonstrated for the first time in quantum-dot lasers. Close to transform limited, 7 ps, 20 GHz pulses are ...

    20 Gb/s 85 °C Error Free Operation of VCSEL based on Submonolayer Deposition of Quantum Dots

    Hopfer, F. / Mutig, A. / Fiol, G. et al. | IEEE | 2006

    5 Gb/s elevated temperature data transmission using quantum dot lasers

    Tan, K.T. / Marinelli, C. / Thompson, M.G. et al. | IEEE | 2004
    We report the first error free 5 Gb/s transmission over 4 km single-mode fibre and 500 m multi-mode fibre using InGaAs/GaAs quantum dot ...

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