Ultrafast dynamics in InAs/GaAs quantum dot amplifiers

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Ultrafast dynamics in InAs/GaAs quantum dot amplifiers

Ultrafast dynamics in InAs/GaAs quantum dot amplifiers

Borri, P. / Langbein, W. / Hvam, J.M. / Mao, M.-H. / Heinrichsdorff, F. / Bimberg, D.

Summary form only given. Semiconductor lasers with an active medium containing zero-dimensional structures are expected to show superior performance, like high material gain and low threshold current. In this work we have measured the transmission properties and the carrier dynamics of InAs/GaAs QD amplifiers at room temperature. The samples consist of 3 stacked layers of InAs/InGaAs/GaAs quantum dots.

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Title :

Ultrafast dynamics in InAs/GaAs quantum dot amplifiers

Contributors:

Borri, P. (author) / Langbein, W. (author) / Hvam, J.M. (author) / Mao, M.-H. (author) / Heinrichsdorff, F. (author) / Bimberg, D. (author)

Published in:

Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Edition. CLEO '99. Conference on Lasers and Electro-Optics (IEEE Cat. No.99CH37013) ; 321-322

Publication date :

1999-01-01

Size :

278530 byte

ISBN :

DOI :

https://doi.org/10.1109/CLEO.1999.834251

Type of media :

Conference paper

Type of material :

Electronic Resource

Language :

English

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