Room temperature quantum dot lasers: From basic experiments to first device oriented structures

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Room temperature quantum dot lasers: From basic experiments to first device oriented structures

Zaitsev, S.V. / Gordeev, N.Yu. / Ustinov, V.M. / Zhukov, A.E. / Egorov, A.Yu. / Kochnev, I.V. / Ledentsov, N.N. / Maximov, M.V. / Kop'ev, P.S. / Alferov, Zh.I. / ... [more]

Abstract

Summary form only given. Due to increasing of the quantum dot (QD) layer number up to 10 the threshold current density was reduced at RT and 85K, respectively in a quantum dot laser. Temperature dependence of the lasing wavelength and its value at RT show that such heterostructure lasers lasing via QD states. It is also proved by linear behaviour of the threshold current density vs. laser optical output losses dependence.

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Document information

Title :

Room temperature quantum dot lasers: From basic experiments to first device oriented structures

Contributors:

Zaitsev, S.V. (author) / Gordeev, N.Yu. (author) / Ustinov, V.M. (author) / Zhukov, A.E. (author) / Egorov, A.Yu. (author) / Kochnev, I.V. (author) / Ledentsov, N.N. (author) / Maximov, M.V. (author) / Kop'ev, P.S. (author) / Alferov, Zh.I. (author)

Published in:

Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society ; 1 ; 320-321 vol.1

Publication date :

1996-01-01

Size :

107176 byte

ISBN :

0-7803-3160-5

DOI :

https://doi.org/10.1109/LEOS.1996.565261

Type of media :

Conference paper