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    Progress in Epitaxial Growth and Performance of Quantum Dot and Quantum Wire Lasers

    Ledentsov, N.N. / Bimberg, D. / Alferov, Z.I. | British Library Online Contents | 2008

    Coulomb Damped Relaxation Oscillations in Semiconductor Quantum Dot Lasers

    Malic, E. / Kwang J. Ahn, / Bormann, M.J.P. et al. | IEEE | 2006

    20 Gb/s 85 °C Error Free Operation of VCSEL based on Submonolayer Deposition of Quantum Dots

    Hopfer, F. / Mutig, A. / Fiol, G. et al. | IEEE | 2006

    Quantum dot photonics: edge emitter, amplifier and VCSEL

    Hopfer, F. / Kuntz, M. / Lammlin, M. et al. | IEEE | 2005

    20 GHz colliding pulse mode-locking of InGaAs quantum dot lasers

    Thompson, M.G. / Marinelli, C. / Zhao, X. et al. | IEEE | 2005
    Colliding pulse mode-locking is demonstrated for the first time in quantum-dot lasers. Close to transform limited, 7 ps, 20 GHz pulses are ...

    Ultrafast gain recovery dynamics of the excited state in InGaAs quantum dot amplifiers

    Schneider, S. / Woggon, U. / Borri, P. et al. | IEEE | 2005
    The gain dynamics in electrically-pumped InGaAs quantum dot amplifiers at 300 K is measured to be in the subpicosecond range for both ...

    GaAs-Based InAs/InGaAs Quantum Dot Vertical Cavity and Vertical External Cavity Surface Emitting Lasers Emitting Near 1300 nm

    Lott, J.A. / Kovsh, A.R. / Ledentsov, N.N. et al. | IEEE | 2005
    quantum dot active regions grown on GaAs substrates that emit over 1 mW continuous wave peak power at room temperature are demonstrated. ...

    5 Gb/s elevated temperature data transmission using quantum dot lasers

    Tan, K.T. / Marinelli, C. / Thompson, M.G. et al. | IEEE | 2004
    We report the first error free 5 Gb/s transmission over 4 km single-mode fibre and 500 m multi-mode fibre using InGaAs/GaAs quantum dot ...

    Properties of InGaAs quantum dot saturable absorbers in monolithic mode-locked lasers

    Thompson, M.G. / Marinelli, C. / Chu, Y. et al. | IEEE | 2004
    Saturable absorbers properties are characterised in monolithic mode-locked InGaAs quantum dot lasers. We analyse the impact of weak quantum ...

    Alpha parameter in quantum-dot amplifier under optical and electrical carrier modulation

    van der Poel, M. / Birkedal, D. / Hvam, J. et al. | IEEE | 2004
    Alpha parameter of a long-wavelength quantum-dot amplifier near 1.3 /spl mu/m is measured to be below one even with saturated gain. A ...

    Bandgap-tuned In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dot lasers

    Kim, S. / Bryce, A.C. / Smith, C.J.M. et al. | IEEE | 2004
    Bandgap tuned quantum dot lasers were fabricated and their performance compared to lasers fabricated from as-grown material. The output ...

    Semiconductor optical amplifiers near 1.3 /spl mu/m based on InGaAs/GaAs quantum dots

    Laemmlin, M. / Bimberg, D. / Uskov, A.V. et al. | IEEE | 2004
    We report fiber-to-fiber gain > 8 dB of a quantum dot amplifier equivalent to a net gain of 0.4 dB/(mm*QD layer). This is to our knowledge ...

    Patterning effects in quantum dot amplifiers characterized through pump probe spectroscopy using two pump pulses

    Berg, T.W. / van der Poel, M. / Laemmlin, M. et al. | IEEE | 2004
    Patterning effects at ultrahigh bitrates in quantum dot amplifiers are investigated by a novel experimental technique. Slow carrier ...

    Prospects for ultrafast optical switching based on quantum dot semiconductor optical amplifiers in nonlinear interferometers

    Uskov, A.V. / O'Reilly, E.P. / Manning, R.J. et al. | IEEE | 2004
    It is shown that interferometers containing quantum-dot semiconductor optical amplifiers can be effective for ultrafast cross-phase ...

    An analog of free carrier plasma component of carrier induced refractive index in quantum dot lasers

    Uskov, A.V. / O'Reilly, E.P. / McPeake, D. et al. | IEEE | 2004
    The carrier-induced refractive index in quantum dot (QD) structures due to optical transitions from QD levels to continuum states is ...

    35 GHz passive mode-locking of InGaAs/GaAs quantum dot lasers at 1.3 /spl mu/m with Fourier-limited pulses

    Kuntz, M. / Fiol, G. / Laemmlin, M. et al. | IEEE | 2004
    We report 35 GHz passive mode-locking and 20 GHz hybrid mode-locking of quantum dot (QD) lasers at 13 /spl mu/m. Our investigations show ...

    Quantum dots for lasers, amplifiers and computing

    Bimberg, D. | IEEE | 2003
    Quantum dots (QDs) enable novel photonic devices like edge and surface emitting lasers, or amplifiers with dramatically improved properties ...

    Linewidth enhancement factor in InGaAs quantum dot amplifiers

    Schneider, S. / Borri, P. / Langbein, W. et al. | IEEE | 2003

    Investigation of high repetition rate mode-locked quantum dot lasers

    Tan, K.T. / Thompson, M.G. / Marinelli, C. et al. | IEEE | 2003
    Passive mode-locking of quantum dot laser at 18 GHz is reported for the first time. The generation of reduced jitter, Fourier transform ...

    The impact of strain on the spontaneous emission from self assembled quantum dot laser diodes

    Tan, K.T. / Wonfor, A. / Penty, R.V. et al. | IEEE | 2003
    The effect of strain in laser diodes with pyramidal quantum dots has been experimentally studied and theoretically modelled. Strongly ...

    Multiple stacks of InAs/InGaAs quantum dots for GaAs-based 1.3 /spl mu/m vertical cavity surface emitting lasers

    Lott, J.A. / Ledentsov, N.N. / Kovsh, A.R. et al. | IEEE | 2003
    In this paper we report on the design and performance of GaAs-based, quantum dot vertical cavity surface emitting lasers (VCSELs) that emit ...

    High bandwidth modulation of multiple contact 1.3 micron quantum dot lasers

    Wonfor, A. / Tan, K.T. / Ribbat, C. et al. | IEEE | 2002
    By forming twin contacts on a 1300 nm quantum dot laser, a small signal modulation bandwidth of 4.6 GHz is achieved. This bandwidth value ...

    High performance long-wavelength QD diode lasers on GaAs substrates

    Maleev, N.A. / Kovsh, A.R. / Zhukov, A.E. et al. | IEEE | 2002
    Long-wavelength GaAs-based quantum dot laser diodes with external differential efficiency of 84...88% combined with low internal loss and ...

    Ultrafast dynamics in InAs/GaAs quantum dot amplifiers

    Borri, P. / Langbein, W. / Hvam, J.M. et al. | IEEE | 1999
    InAs/GaAs QD amplifiers at room temperature. The samples consist of 3 stacked layers of InAs/InGaAs/GaAs quantum dots. ...

    Vertical cavity surface emitting lasers based on vertically coupled quantum dots

    Ledentsov, N.N. / Ustinov, V.M. / Lott, J.A. et al. | IEEE | 1997

    Room Temperature Multi-stacked Quantum Dot Lasers Basic Components Of Threshold Current Density

    Zaitsev, S.V. / Georgievski, A.M. / Gordeev, N.Yu. et al. | IEEE | 1997

    Overcoming gain saturation in InAs/GaAs quantum dot lasers

    Schmidt, O.G. / Kirstaedter, N. / Mao, M.-H. et al. | IEEE | 1996
    By stacking multiple layers of InAs-GaAs quantum dots gain saturation in zero-dimensional laser structures is overcome. The effect of ...

    Room temperature quantum dot lasers: From basic experiments to first device oriented structures

    Zaitsev, S.V. / Gordeev, N.Yu. / Ustinov, V.M. et al. | IEEE | 1996
    Summary form only given. Due to increasing of the quantum dot (QD) layer number up to 10 the threshold current density was reduced at RT ...

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