Investigation of the carrier dynamics of strain compensated InGaAsN quantum wells

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Investigation of the carrier dynamics of strain compensated InGaAsN quantum wells

Lifang Xu, / Patel, D. / Vaschenko, G. / Anton, O. / Menoni, C.S. / Jeng-Ya Yeh, / Van Roy, T.T. / Mawst, L.J. / Tansu, N.

Abstract

A quantum dot-like behavior in the dynamics of carrier recombination is observed in InGaAsN quantum wells at temperatures at and below /spl sim/ 150 K. At higher temperatures defect recombination plays a dominant role.

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Title :

Investigation of the carrier dynamics of strain compensated InGaAsN quantum wells

Contributors:

Lifang Xu, (author) / Patel, D. (author) / Vaschenko, G. (author) / Anton, O. (author) / Menoni, C.S. (author) / Jeng-Ya Yeh, (author) / Van Roy, T.T. (author) / Mawst, L.J. (author) / Tansu, N. (author)

Published in:

(CLEO). Conference on Lasers and Electro-Optics, 2005. ; 3 ; 2134-2136 Vol. 3

Publication date :

2005-01-01

Size :

868991 byte

ISBN :

1-55752-795-4

DOI :

https://doi.org/10.1109/CLEO.2005.202393

Type of media :

Conference paper