Carrier confinement in 1300-nm InGaAsN quantum-well lasers

You are here: Homepage > Search

Carrier confinement in 1300-nm InGaAsN quantum-well lasers

Carrier confinement in 1300-nm InGaAsN quantum-well lasers

Tansu, N. / Yeh, J.-Y. / Mawst, L.J.

Theoretical and experimental analysis of carrier transport in high-performance 1300-nm InGaAsN QW lasers, indicate significant thermionic hole leakage. Experimental optimization of the InGaAsN QW lasers by suppressing the carrier leakage, results in an extremely-low threshold current density of only 440 A/cm/sup 2/ at temperatures of 90/spl deg/C.

Access

Check availability in my library

Order at Subito €

Export, share and cite

Document information

Title :

Carrier confinement in 1300-nm InGaAsN quantum-well lasers

Contributors:

Tansu, N. (author) / Yeh, J.-Y. (author) / Mawst, L.J. (author)

Published in:

Conference on Lasers and Electro-Optics, 2003. CLEO '03. ; 2 pp.

Publication date :

2003-01-01

Size :

179915 byte

ISBN :

Type of media :

Conference paper

Type of material :

Electronic Resource

Language :

English

Similar titles

Carrier transport and injection efficiency of InGaAsN quantum-well lasers

Jeng-Ya Yeh, / Mawst, L.J. / Tansu, N. | IEEE | 2004

Carrier Transport and Injection Efficiency of InGaAsN Quantum-Well Lasers

Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004

Femtosencond carrier dynamics in InGaAsN single quantum well

Hsieh, C.-L. / Liu, T.-M. / Tien, M.-C. et al. | British Library Conference Proceedings | 2003

The effect of nitrogen in InGaAsN quantum well lasers

Palmer, D.J. / Smowton, P.M. / Blood, P. et al. | IEEE | 2004

Temperature Sensitivity of 1360-nm InGaAsN Quantum Well Lasers

IEEE | British Library Conference Proceedings | 2003

Access

Check availability in my library

Order at Subito €

Page navigation

Document information

Export, share and cite