Fabrication of the laser structures relied on molecular beam epitaxy for the growth of the waveguide core (lower waveguide layer, active region and upper waveguide layer). Metalorganic vapor phase epitaxy was used for the growth of the InP top cladding layer and for the re-growth of the buried heterostructure. As shown schematically between the two waveguide layers comprised 35 repetitions of alternating un-doped 4 QW active regions.
Room temperature continuous wave operation of quantum cascade lasers
2002-01-01
128652 byte
Conference paper
Electronic Resource
English
Continuous-Wave, Room-Temperature Quantum Cascade Lasers
British Library Online Contents | 2006
|Room Temperature Continous Wave Operation of Quantum Cascade Lasers
British Library Conference Proceedings | 2002
|Continuous-wave operation of quantum cascade lasers above room temperature (Invited Paper) [4817-01]
British Library Conference Proceedings | 2002
|