Fabrication of the laser structures relied on molecular beam epitaxy for the growth of the waveguide core (lower waveguide layer, active region and upper waveguide layer). Metalorganic vapor phase epitaxy was used for the growth of the InP top cladding layer and for the re-growth of the buried heterostructure. As shown schematically between the two waveguide layers comprised 35 repetitions of alternating un-doped 4 QW active regions.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Room temperature continuous wave operation of quantum cascade lasers


    Beteiligte:
    Hofstetter, D. (Autor:in) / Beck, M. (Autor:in) / Aellen, T. (Autor:in) / Faist, M. (Autor:in) / Oesterle, U. (Autor:in) / Ilegems, M. (Autor:in) / Gini, E. (Autor:in) / Melchior, H. (Autor:in)


    Erscheinungsdatum :

    2002-01-01


    Format / Umfang :

    128652 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Continuous-Wave, Room-Temperature Quantum Cascade Lasers

    Falst, J. | British Library Online Contents | 2006


    Room Temperature Continous Wave Operation of Quantum Cascade Lasers

    Institute of Electrical and Electronics Engineers | British Library Conference Proceedings | 2002


    Continuous-wave operation of quantum cascade lasers above room temperature (Invited Paper) [4817-01]

    Beck, M. / Hofstetter, D. / Aellen, T. et al. | British Library Conference Proceedings | 2002


    High temperature continuous-wave operation of terahertz quantum cascade lasers

    Kumar, S. / Williams, B.S. / Kohen, S. et al. | IEEE | 2004


    Room temperature operation of electrically tunable quantum cascade lasers

    Muller, A. / Beck, M. / Faist, J. et al. | IEEE | 1999