1.02/spl mu/m strained InGaAs/AlGaAs Double Quantum-Well High-Power Lasers with GaInP Buried Waveguides
1.02/spl mu/m strained InGaAs/AlGaAs Double Quantum-Well High-Power Lasers with GaInP Buried Waveguides
- New search for: Shin Ishikawa,
- New search for: Fukagai, K.
- New search for: Miyazaki, T.
- New search for: Fujii, H.
- New search for: Kenji Endo,
- New search for: Shin Ishikawa,
- New search for: Fukagai, K.
- New search for: Miyazaki, T.
- New search for: Fujii, H.
- New search for: Kenji Endo,
High-power 1.02-/spl mu/m strained InGaAsIAIGaAs double quantum-well lasers with GaInP buried waveguides have been developedfor Pr/sup 3+/-doped fiber amplifier pumping. 415-mW maximurn cw light output power and stable 100-mW operation have been achieved.
Document information
1.02/spl mu/m strained InGaAs/AlGaAs Double Quantum-Well High-Power Lasers with GaInP Buried Waveguides
1992-01-01
159882 byte
Conference paper
Electronic Resource
English
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