Low-threshold strained GaInP quantum-well ridge lasers with AlGaAs Cladding Layers

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Low-threshold strained GaInP quantum-well ridge lasers with AlGaAs Cladding Layers

Unger, P. / Bona, G.L. / Germann, R. / Roentgen, P. / Webb, D.J.

Low-threshold strained GalnP quantum well ridge lasers with AlGaAs cladding layers have been fabricated. Due to an electroplated heat spreader the devices can be operated junction-side up at temperatures up to 90//spl deg/C.

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Title :

Low-threshold strained GaInP quantum-well ridge lasers with AlGaAs Cladding Layers

Contributors:

Unger, P. (author) / Bona, G.L. (author) / Germann, R. (author) / Roentgen, P. (author) / Webb, D.J. (author)

Published in:

13th IEEE International Semiconductor Laser Conference ; 188-189

Publication date :

1992-01-01

Size :

272999 byte

ISBN :

4-930813-51-4

DOI :

https://doi.org/10.1109/ISLC.1992.763631

Type of media :

Conference paper

Type of material :

Electronic Resource

Language :

English

Unger, P. / Bona, G. L. / Germann, R. et al. | British Library Conference Proceedings | 1992

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