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    Femtosecond carrier dynamics in InGaAsN single quantum well

    Femtosecond carrier dynamics in InGaAsN single quantum well


    Femtosecond carrier dynamics in InGaAsN single quantum well were studied for the first time. Pump-probe measurement shows the enhanced free carrier absorption due to highly excited carriers with a delayed carrier cooling time around 2/spl sim/3.7ps.

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    Title :

    Femtosecond carrier dynamics in InGaAsN single quantum well

    Contributors:
    Chia-Lung Hsieh, (author) / Tzu-Ming Liu, (author) / Ming-Chun Tien, (author) / Chi-Kuang Sun, (author) / Li-Wei Sung, (author) / Hao-Hsiung Lin, (author)
    Published in:

    CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on Lasers and Electro-Optics (IEEE Cat. No.03TH8671) ; 1 ; 83 Vol.1

    Publication date :

    2003-01-01

    Size :

    76465 byte

    ISBN :

    0-7803-7766-4

    DOI :

    https://doi.org/10.1109/CLEOPR.2003.1274553

    Type of media :

    Conference paper

    Type of material :

    Electronic Resource

    Language :

    English

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