A New Class of Normal Incidence P-type Strained-Layer InGaAs/InAlAs and InGaAs/GaAs Quantum Well Infrared Photodetectors for 8-12�m Detection

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A New Class of Normal Incidence P-type Strained-Layer InGaAs/InAlAs and InGaAs/GaAs Quantum Well Infrared Photodetectors for 8-12m Detection

IEEE; Lasers and Electro-Optics Society

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Title :

A New Class of Normal Incidence P-type Strained-Layer InGaAs/InAlAs and InGaAs/GaAs Quantum Well Infrared Photodetectors for 8-12m Detection

Contributors:

IEEE; Lasers and Electro-Optics Society

Conference:

7th Annual meeting, LEOS '94 ; 1994 ; Boston; MA

Published in:

LEOS '94 ; 25

LEOS -ANNUAL MEETING- ; 1

Publication date :

1994-01-01

Size :

25 pages

Remarks:

In 2 vols; IEEE Cat no 94CH3371-2

ISBN :

0780314719 , 0780314700 , 0780314727

Type of media :

Conference paper

Type of material :

Language :

English

Keywords :

LEOS , lasers , IEEE , electro-optics

Lee, C. / Zhou, W. / Choi, K. K. et al. | British Library Conference Proceedings | 1995

A Normal Incidence Two-Color P-Type Compressive Strained-Layer InGaAs/GaAs Quantum Well Infrared Photodetector

Wang, Y. H. / Chu, J. / Li, S. S. et al. | British Library Conference Proceedings | 1995

InGaAs/GaAs strained quantum-well lasers

Dutta, Niloy K. | SPIE | 1993

Performance of Strained InGaAs/InAlAs Multiple-Quantum-Well Electroabsorption Modulators

Ido, T. / Sano, H. / Tanaka, S. et al. | British Library Online Contents | 1996

Strained InGaAs quantum-well superluminescent diodes

Dzurko, Kenneth M. / Moore, Alan H. | SPIE | 1992

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