A New Class of Normal Incidence P-type Strained-Layer InGaAs/InAlAs and InGaAs/GaAs Quantum Well Infrared Photodetectors for 8-12m Detection
A New Class of Normal Incidence P-type Strained-Layer InGaAs/InAlAs and InGaAs/GaAs Quantum Well Infrared Photodetectors for 8-12m Detection
- Neue Suche nach: IEEE; Lasers and Electro-Optics Society
- Neue Suche nach: IEEE; Lasers and Electro-Optics Society
Dokumentinformationen
A New Class of Normal Incidence P-type Strained-Layer InGaAs/InAlAs and InGaAs/GaAs Quantum Well Infrared Photodetectors for 8-12m Detection
7th Annual meeting, LEOS '94 ; 1994 ; Boston; MA
1994-01-01
25 pages
In 2 vols; IEEE Cat no 94CH3371-2
Aufsatz (Konferenz)
Englisch
LEOS , lasers , IEEE , electro-optics
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