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^*Silicon Quantum Dots in Silica

Henderson, D. O. / Wu, M. H. / Mu, R. et al. | British Library Conference Proceedings | 1999

1.3 gm Quantum dot distributed feedback lasers based on an asymmetric InAs/GaInAs dots-in-a-well design

Deubert, S. / Krebs, R. / Reithmaier, J.P. et al. | IEEE | 2003

This paper presents the device properties of single mode distributed feedback lasers based on InGaAs/GaAs quantum dots in a well design ...

1.3 micron In(Ga)As/GaAs Quantum-Dot Lasers and their Dynamic Properties

IEEE | British Library Conference Proceedings | 2003

1.3 mum High Density Quantum Dots Laser with Short Cavity and Cleaved Facet

IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005

1.3mum Quantum Dot Lasers with Single and Stacked Active Layers

IEEE | British Library Conference Proceedings | 1999

1.3/spl mu/m electroluminescence from MOCVD-grown quantum dots

Wong, P.S. / Xin, Y. / Birudavolu, S. et al. | IEEE | 2003

1.3 /spl mu/m high density quantum dot laser with short cavity and cleaved facet

Amano, T. / Sugaya, T. / Komori, K. | IEEE | 2005

This paper reports the characteristics of a high density quantum dot (QD) laser. This work demonstrates beyond 1.3-/spl mu/m wavelength ...

1.3 /spl mu/m ln(Ga)As/GaAs quantum-dot lasers and their dynamic properties

Mao, M.-H. / Wu, T.-Y. / Chang, F.-Y. et al. | IEEE | 2003

In(Ga)As/GaAs quantum-dot lasers with emission wavelength at 1295 nm at room temperature are fabricated. The highest relaxation oscillation ...

1.3μm Quantum Dot Self-Aligned Stripe Laser

Groom, K. M. / Assamoi, P. J. / Hugues, M. et al. | IEEE | 2008

We demonstrate, for the first time, the application of a manufacturable self-aligned stripe technique to quantum dot lasers emitting at ...

1.27m Resonant Cavity PIN Photodetector using an InAs/GaAs Quantum Dot Active Region Grown on GaAs

IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997

1.28 mum InAs/GaAs Quantum Dot Lasers with AlGaAs Cladding Layer Grown at Low Temperature by Metalorganic Chemical Vapor Deposition

Institute of Electrical and Electronics Engineers | British Library Conference Proceedings | 2004

1.28 /spl mu/m InAs/GaAs quantum dot lasers with AlGaAs cladding layer grown at low temperature by metalorganic chemical vapor deposition

Tatebayashi, J. / Hatori, N. / Ishida, M. et al. | IEEE | 2004

This work reports the long-wavelength lasing of self-assembled InAs quantum dot lasers with AlGaAs cladding layer grown by MOCVD. By ...

1.64 /spl mu/m emission from InAs quantum dots grown on a GaAs substrate using AlGaAsSb metamorphic buffers

Balakrishnan, G. / Dawson, L.R. / Huffaker, D.L. et al. | IEEE | 2003

We have used an AlGaAsSb metamorphic buffer layer to extend the emission wavelength of InAs quantum dots grown on GaAs. Ground-state ...

1Â Tb/s high quality factor NOR gate based on quantum-dot semiconductor optical amplifier

Kotb, A. | British Library Online Contents | 2013

2-D photonic crystal microcavities

Scherer, A. / Yoshie, T. / Loncar, M. et al. | IEEE | 2003

We have recently developed photonic crystal nanocavities and lasers from both InGaAsP quantum well and InGaAs/GaAs quantum dot materials ...

5 Gb/s elevated temperature data transmission using quantum dot lasers

Tan, K.T. / Marinelli, C. / Thompson, M.G. et al. | IEEE | 2004

We report the first error free 5 Gb/s transmission over 4 km single-mode fibre and 500 m multi-mode fibre using InGaAs/GaAs quantum dot ...

20 Gb/s 85 °C Error Free Operation of VCSEL based on Submonolayer Deposition of Quantum Dots

Hopfer, F. / Mutig, A. / Fiol, G. et al. | IEEE | 2006

20 GHz colliding pulse mode-locking of InGaAs quantum dot lasers

Thompson, M.G. / Marinelli, C. / Zhao, X. et al. | IEEE | 2005

Colliding pulse mode-locking is demonstrated for the first time in quantum-dot lasers. Close to transform limited, 7 ps, 20 GHz pulses are ...

20GHz Colliding Pulse Mode-Locking of InGaAs Quantum Dot Lasers

Thompson, M. | British Library Conference Proceedings | 2005

35 GHz passive mode-locking of InGaAs/GaAs quantum dot lasers at 1.3 /spl mu/m with Fourier-limited pulses

Kuntz, M. / Fiol, G. / Laemmlin, M. et al. | IEEE | 2004

We report 35 GHz passive mode-locking and 20 GHz hybrid mode-locking of quantum dot (QD) lasers at 13 /spl mu/m. Our investigations show ...

35 GHz Pure Passively Mode Locked Quantum Dot Lasers Operating Close to 1.3mum

Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004

35 GHz pure passively mode locked quantum dot lasers operating close to 1.3 /spl mu/m

Tan, W.K. / Bryce, A.C. / Marsh, J.H. et al. | IEEE | 2004

35 GHz passive mode locking operation of InAs/GaAs/AlGaAs quantum dot (QD) lasers emitting close to 1.3 /spl mu/m is reported for the first ...

100-nm Quantum Dot Waveguides by Two-Layer Self-Assembly

IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005

100-nm quantum dot waveguides by two-layer self-assembly

Chia-Jean Wang, / Lin, L.Y. / Parviz, B.A. | IEEE | 2005

We demonstrate for the first time fabrication of 100 nm and 500 nm quantum dot waveguides, whose design relies on stimulated emission to ...

1300 nm on gallium arsenide: quantum dots vs GaInNAs

Fiore, A. / Markus, A. / Chen, J.X. et al. | IEEE | 2002

quantum dots (QDs). By directly comparing the radiative properties of identical structures comprising QDs and GaInNAs QWs, we evidence the ...

2004 IEEE LEOS Annual Meeting Conference Proceedings (IEEE Cat. No.04CH37581)

IEEE | 2004

program; polarization mode dispersion; microfluidic devices; quantum dot materials and devices; hardware for optical communications; sensor ...

2005 IEEE LEOS Annual Meeting

IEEE | 2005

The following topics are dealt with: careers in optical engineering optoelectronics research; lasers in remote sensing; quantum dots ...

Absence of filamentation in quantum-dot lasers. Theory and experiment

Chow, W.W. / Schneider, H.C. / Pearce, E.J. et al. | IEEE | 2002

We theoretically and experimentally investigate the lateral mode behavior of quantum-dot lasers, and demonstrate the absence of ...

Absence of Filamentation in Quantum-Dot Lasers: Theory and Experiment

Institute of Electrical and Electronics Engineers | British Library Conference Proceedings | 2002

A comparison of the overall radiative efficiency of DWELL, standard QD and QW laser structures

Pearce, E.J. / Smowton, P.M. / Summers, H.D. et al. | IEEE | 2003

Carrier distributions in DWELL (quantum dot within a quantum well) and standard quantum dot (QD) lasers are similar but radiative ...

Active Mode-Locking of Quantum Dot Fabry-Perot Laser Diode

Shen, A. / van Dijk, F. / Renaudier, J. et al. | IEEE | 2006

Adding quantum dots to microdisks makes silicon-based light emitters

British Library Online Contents | 2007

Advanced Space-Based Detectors

D. Cardimona | NTIS | 2014

Keywords: Quantum dots

A lattice of electromagnetic solitons in a superlattice formed by a system of quantum dots

Belonenko, M. B. / Meshcheryakova, N. E. | British Library Online Contents | 2008

All-epitaxial buried heterostructure quantum dot vertical-cavity surface-emitting lasers and single quantum dot light sources

Deppe, D.G. / Ahn, J. / Lu, D. et al. | IEEE | 2005

In this paper, experimental data based on incorporating self-organized quantum dots (QDs) in a new type of all-epitaxial microcavity that ...

All-Epitaxial Buried Heterostructure Quantum Dot Vertical-Cavity Surface-Emitting Lasers and Single Quantum Dot Light Sources

IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005

All-optical coherent control of spin dynamics in semiconductor quantum dots

Slavcheva, G. / Hess, O. | British Library Online Contents | 2006

All-optical multistability using cross-gain modulation in quantum-dot distributed feedback semiconductor optical amplifier

Qasaimeh, O. | British Library Online Contents | 2018

All optical quantum dot spin manipulation

Atature, M. / Dreiser, J. / Hogele, A. et al. | IEEE | 2005

The coherence time of an excess electron spin confined in a quantum dot structure is expected to be orders of magnitude longer than the ...

All-Optical XOR Gate Using Single Quantum-Dot SOA and Optical Filter

Dimitriadou, E. / Zoiros, K.E. | British Library Online Contents | 2013

Alpha parameter in quantum-dot amplifier under optical and electrical carrier modulation

van der Poel, M. / Birkedal, D. / Hvam, J. et al. | IEEE | 2004

Alpha parameter of a long-wavelength quantum-dot amplifier near 1.3 /spl mu/m is measured to be below one even with saturated gain. A ...

A Master Oscillator Power Amplifier System based on External Cavity Mode-Locking of a Quantum-Dot Two-Section Diode Laser

IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005

A master oscillator power amplifier system based on external cavity mode-locking of a quantum-dot two-section diode laser

Myoung-Taek Choi, / Wangkuen Lee, / Ji-Myung Kim, et al. | IEEE | 2005

Analysis of Relative Intensity Noise Spectra for Uniformly and Chirpily Stacked InAs-InGaAs-GaAs Quantum Dot Lasers

Lin, G. / Tang, H.-L. / Cheng, H.-C. et al. | British Library Online Contents | 2012

Analysis of Relative Intensity Noise Spectra for Uniformly and Chirpily Stacked InAs-InGaAs-GaAs Quantum Dot Lasers

Lin, G. / Tang, H.-L. / Cheng, H.-C. et al. | British Library Online Contents | 2012

Analysis of wetting layer effect on electronic structures of truncated-pyramid quantum dots

Zhao, Q. / Mei, T. / Zhang, D. et al. | British Library Online Contents | 2011

An analog of free carrier plasma component of carrier induced refractive index in quantum dot lasers

Uskov, A.V. / O'Reilly, E.P. / McPeake, D. et al. | IEEE | 2004

The carrier-induced refractive index in quantum dot (QD) structures due to optical transitions from QD levels to continuum states is ...

A nanophotonic NOT-gate using near-field optically coupled quantum dots

Kawazoe, T. / Kobayashi, K. / Ohtsu, M. | IEEE | 2005

We demonstrate, for the first time, operation of a nanometric (20 nm) optical NOT-gate using quantum dots coupled by an optical near-field ...