This paper presents the device properties of single mode distributed feedback lasers based on InGaAs/GaAs quantum dots in a well design. This laser structure was grown by solid source molecular beam epitaxy. With this improved quantum dot DFB laser with shorter facet-coated cavities a significant improvement in the dynamic properties is achieved.
1.3 gm Quantum dot distributed feedback lasers based on an asymmetric InAs/GaInAs dots-in-a-well design
2003-01-01
81330 byte
Conference paper
Electronic Resource
English
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