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Optical properties
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SiO~x thin films as material for uncooled microbolometer [5065-33]
IR photodetectors on CdSb, In~4Se~3, In~4Te~3-epitaxial barrier structures [5065-17]
Electromagnetic field structure and quenching in one-dimensional photonic crystals [5065-11]
Substrate influence on infrared absorption by clusters of small spheres [5065-14]
The study of HgCdMnZnTe main-band parameters [5065-19]
Chemical dissolution of gallium antimonide in HNO~3-HCl-CH~3COOH solutions [5065-31]
The influence of doping methods on electro-physical properties of CdTe:Mn crystals [5065-16]
Formation of low-density InAs/InP(001) quantum dot arrays [5065-27]
Defect structure and diffusion of defects in narrow-gap Hg~1~-~xCd~xTe crystals [5065-26]
Nonelastic electron scattering in HgTe [5065-13]
Chemical etching of CdTe and Cd~xHg~1~-~xTe in the H~2O~2-HJ-tartaric acid solutions [5065-30]
Status of molecular beam epitaxy of Cd~xHg~1~-~xTe [5065-28]
Prototype infrared optical sensor and solar cell made of beta-FeSi~2 thin film [5065-24]
Quartz as artificial pyroactive material [5065-12]
IRFPA real-time nonuniformity correction using FPGA technology [5065-06]
Multifunctional controlled IR-emitting element [5065-07]
Threshold characteristics of p-Si-PtSi barriers with highly doped surface nanolayer [5065-15]