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Dielectric function of nonlinear metal composite with double-layer ellipsoidal inclusions [3890-62]
Thermodiffusion in Si-X-Ge~3~3As~1~2Se~5~5 (X:Sb,Bi) interface [3890-82]
Photosensitization of Cd~xHg~1~-~xTe epitaxial films by laser-induced shock wave [3890-71]
Polycrystallinity to epitaxy: AFM study of CdTe hydrothermal electrodeposition [3890-69]
Changes of defect structure of ZnSe crystals under passing of laser-induced shock wave [3890-68]
Radiation defect band in Pb~1~-~xSn~xSe(x0.03) alloys irradiated with electrons [3890-54]
Infrared absorption and dielectric properties of Li-Cu ferrite [3890-47]
Charge impurity states of In, Ga, Ge in narrow-gap PbTe [3890-26]
Currents in Hg~1~-~xCd~xTe photodiodes [3890-22]
New film materials for optoelectronics based on CdAl(Ga)~2S(Se)~4 compounds [3890-20]
Optical properties of Hg~1~-~xCd~xTe/CdTe epitaxial films with graded band gap [3890-13]
Precipitation mechanism of GaAs~1~-~xP~x/GaAs in the isothermal CVD method [3890-78]
Effect of laser irradiation on photoconductivity of GaAs crystals [3890-72]
Impurity profile determination by the optimal parameter choice method [3890-44]