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    Title :

    Changes of defect structure of ZnSe crystals under passing of laser-induced shock wave [3890-68]



    Conference:

    International conference; 4th, Material science and material properties for infrared optoelectronics ; 1998 ; Kiev



    Publication date :

    1999-01-01


    Size :

    4 pages




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




    Nr. 3890

    DataCite | 1920


    Photosensitization of Cd~xHg~1~-~xTe epitaxial films by laser-induced shock wave [3890-71]

    Gnatyuk, V. A. / Gorkovenko, B. L. / Gorodnychenko, O. S. et al. | British Library Conference Proceedings | 1999


    Effect of laser irradiation on photoconductivity of GaAs crystals [3890-72]

    Gnatyuk, V. A. / Gorodnychenko, O. S. / Mozol', P. E. et al. | British Library Conference Proceedings | 1999


    Photoresponse in nonuniform semiconductor junctions under infrared laser excitation [3890-21]

    Asmontas, S. P. / Gradauskas, J. / Seliuta, D. et al. | British Library Conference Proceedings | 1999


    Depth inhomogeneity of ZnTe, CdZnTe, ZnSe epilayers grown on (001)GaAs of MBE [3890-28]

    Venger, E. F. / Sadof'ev, Y. G. / Semenova, G. N. et al. | British Library Conference Proceedings | 1999