Insulated gate bipolar transistor family
Insulated gate bipolar transistor family
- New search for: Aloisi, P.
- New search for: Aloisi, P.
Switch characteristics must be adapted to the main application requirements: low on losses for a static switch and very fast devices for a switchmode power supply. It is very difficult to built one IGBT with physical characteristics which could fit all these applications. So it will be seen the main switch requirements and how the IGBT technology is split in some subfamilies taking the physical trade off into account. Oscillograms and results will be shown to sustain the technological choices.
Document information
Insulated gate bipolar transistor family
IGBT-Familie
1995
6 Seiten, 12 Bilder, 1 Quelle
Conference paper
English
IGBT (insulated gate bipolar transistor) , Schaltzeit , Verlustleistung , Einschalten , Ausschalten , Schaltnetzteil , Stromrichter , Umrichter , Pulsdauermodulation , Ersatzschaltbild , elektronische Zündanlage , Kraftfahrzeugelektrik , Strom-Spannungs-Kennlinie , dynamische Charakteristik , Halbleiterschalter , Kurzschlussfestigkeit , Leistungselektronik
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