Silicon solar cells with improved radiation resistance

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Silicon solar cells with improved radiation resistance

Markvart, T. / Willoughby, A.F. / Dollery, A.A.

This paper describes preliminary results of a study aimed at the improvement of radiation resistance of silicon solar cells by incorporation of a defect gettering zone. Despite the preliminary nature of the present study, it emerges without doubt that the incorporation of defect gettering zone into solar cells improves considerably their radiation resistance. A quantitative comparison of the absolute values with the standard cells is, at present, difficult on account of different surface conditions, large spread in resistivity of these cells, etc., but some preliminary conclusions can be made. A part of the increase in radiation resistance comes undoubtedly from the short initial diffusion length in these cells, but there are indications that cells with defect gettering may combine advantages of cells with high and low oxygen concentrations. This is manifested, for example, by a higher blue response as in the high-oxygen cells, but a DLTS defect spectrum which resembles the spectrum of cells from low-oxygen material.