Heat resistant metallization technique for SiC power devices
Heat resistant metallization technique for SiC power devices
- New search for: Hanamura, Akihiro
- New search for: Suzuki, Tatsuhiro
- New search for: Tanimoto, Satoshi
- New search for: Suzuki, Tadashi
- New search for: Hanamura, Akihiro
- New search for: Suzuki, Tatsuhiro
- New search for: Tanimoto, Satoshi
- New search for: Suzuki, Tadashi
Nickel silicide contacts on SiC substrates can peel off their metal stacks. We found that this failure is caused by the interfacial accumulation of carbon atoms migrating from carbon precipitates in NiSi. To overcome this failure, we developed a technique for removing carbon precipitates by thermal oxidation. This is followed by a buffered hydrofluoric acid (HF) scrubbing treatment before metal deposition. The technique was used to fabricate heat-resistant Ni silicide contacts with a Ti/Ni/Ag bottom electrode. The contacts displayed very low specific resistance.
Document information
Heat resistant metallization technique for SiC power devices
Hitzebeständige Metallisierungstechnik für SiC-Starkstromeinrichtungen
Review of Automotive Engineering (JSAE) ; 29 , 3 ; 375-380
2008
6 Seiten, 9 Bilder, 22 Quellen
Article (Journal)
English
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