Effects of ionizing radiation on BICMOS components for space application

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Effects of ionizing radiation on BICMOS components for space application

Colder, A. / Croitoru, N. / D'Angelo, P. / Marchi, M. de / Falica, G. / Leonardi, S. / Levalois, M. / Marie, P. / Modica, R. / Rancoita, P.G. / ... [more]

Abstract

In this paper experimental results on radiation effects on a BICMOS high-speed standard commercial technology, manufactured by ST-Microelectronics, are reported. Bipolar transistors were irradiated by neutrons, ions, or by both of them. Fast neutrons, as well as other types of particles, produce defects, mainly by displacing silicon atoms from their lattice positions to interstitial locations, i.e. generating vacancy-interstitial pairs, the so-called Frenkel pairs. Defects introduce trapping energy states which degrade the common emitter current gain beta. The gain degradation has been investigated for collector current, I_c, between 1 microA and 1 mA. It was found a linear dependence of Delta(1/beta) = 1/beta_i - 1/beta (where beta_i and beta are the gain after and before the irradiation) as a function of the concentration of Frenkel pairs. The bipolar transistors made on this technology have shown to be particularly radiation resistant. For instance, npn small area transistors have a gain variation (beta - beta_i)/beta, lower than 10 % for doses of about 0.5 MRad and collector currents of 1 microA, well suited for low power consumption space application

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Document information

Title :

Effects of ionizing radiation on BICMOS components for space application

Additional title:

Auswirkungen ionisierender Strahlung auf BiCMOS-Komponenten für die Raumfahrt

Contributors:

Colder, A. (author) / Croitoru, N. (author) / D'Angelo, P. (author) / Marchi, M. de (author) / Falica, G. (author) / Leonardi, S. (author) / Levalois, M. (author) / Marie, P. (author) / Modica, R. (author) / Rancoita, P.G. (author)

Published in:

ESCCON, European Space Components Conference, 2002 ; 377-386

ESA SP - European Space Agency Special Publications ; 507

Publication date :

2002

Size :

10 Seiten, 11 Bilder, 3 Tabellen, 18 Quellen

ISBN :

92-9092-817-4

ISSN :

0379-6566

Type of media :