Surface morphology of LPE-growth GaSb quantum dots

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Surface morphology of LPE-growth GaSb quantum dots

Wang, Yang / Hu, Shuhong / Lv, Yingfei / Dai, Ning

The self-assembled type-II GaSb quantum dots (QDs) were successfully grown on semi-insulting GaAs (100) substrate by the liquid phase epitaxy (LPE) technique with growth temperature ranging from 520 to 580 oC. The morphology of GaSb QDs including size, shape and density was investigated by atomic force microscopy measurement and scanning electron microscope measurement, respectively. The cap layer with scores of nanometers, which is characterized by Profile-system, is obtained for the photoluminescence measurement and device fabrication.

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Title :

Surface morphology of LPE-growth GaSb quantum dots

Contributors:

Wang, Yang (author) / Hu, Shuhong (author) / Lv, Yingfei (author) / Dai, Ning (author)

Conference:

Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II ; 2014 ; China,China

Published in:

Proc. SPIE ; 9522

Publication date :

2015-04-13

ISBN :

9781628416534

ISSN :

0277-786X

DOI :

https://doi.org/10.1117/12.2182638

Type of media :

Conference paper