Noise characteristic of AlGaN-based solar-blind UV avalanche photodiodes

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Noise characteristic of AlGaN-based solar-blind UV avalanche photodiodes

Chang, C. / Xu, J. T. / Li, X. Y.

A particular system for excess noise of avalanche photodiode (APD) measurement was build. Then the signal-noise ratio at different reverse voltage and the noise spectrum are measured and analyzed on different devices. First, the noise measurement system was constructed to fulfill the requirement that a high DC voltage can be applied on, and the measurement system was carefully shielded to protect from disturbance of electromagnetic radiations. Than we measured the noise spectrums of separate absorption and multiplication (SAM) type solar-blind APDs. The noise spectrums of SAM APDs which have different dark current levels were also measured. The results show that the low-frequency noise is dominant across a wide frequency range. And as the dark current goes higher, shot noise and low-frequency noise go higher at the same time. And the low-frequency noise will also takes more proportion in the spectrum when dark current goes higher. On the other hand, noise measurements at different reverse voltage and in either UV illumination or dark show that the excess noise factor increase faster as the gain increase. This leads to a decrease of signal-noise ratio at very high gain. In order to get a higher signal-noise ratio, a proper high gain should be adopted, rather than a gain “higher and better”.

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Title :

Noise characteristic of AlGaN-based solar-blind UV avalanche photodiodes

Contributors:

Chang, C. (author) / Xu, J. T. (author) / Li, X. Y. (author)

Conference:

Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II ; 2014 ; China,China

Published in:

Proc. SPIE ; 9522

Publication date :

2015-04-13

ISBN :

9781628416534

ISSN :

0277-786X

DOI :

https://doi.org/10.1117/12.2180427

Type of media :

Conference paper