Silicon Schottky Diode Safe Operating Area

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Silicon Schottky Diode Safe Operating Area

M. C. Casey / J. Lauenstein / R. L. Ladbury / E. P. Wilcox / A. M. Phan / K. A. Label

Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacementdamage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.

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Title :

Silicon Schottky Diode Safe Operating Area

Contributors:

M. C. Casey (author) / J. Lauenstein (author) / R. L. Ladbury (author) / E. P. Wilcox (author) / A. M. Phan (author) / K. A. Label (author)

Publication date :

2016

Size :

16 pages

Type of media :

Report

Type of material :

No indication

Language :

English

Keywords :

Electrotechnology , Displacement , Degradation , Electric potential , Silicon , Schottky diodes , Electro-optics , Damage , Heavy ions , Dosage , Quality Control & Reliability

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