Low Threshold Current Density Operation of GaInAsP/InP DFB Lasers Consisting of Quantum-Wire Active Regions
Low Threshold Current Density Operation of GaInAsP/InP DFB Lasers Consisting of Quantum-Wire Active Regions
- New search for: Yagi, H.
- New search for: Miura, K.
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- New search for: Arai, S.
- New search for: Yagi, H.
- New search for: Miura, K.
- New search for: Nishimoto, Y.
- New search for: Plumwongrot, D.
- New search for: Maruyama, T.
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GaInAsP/InP distributed feedback lasers with quantum-wire active regions (30 nm wide) were realized by dry etching and regrowth method. A2 threshold current density as low as 176 A/cm2(Ith= 2.1 mA) was successfully achieved under the RT-CW condition.
Document information
Low Threshold Current Density Operation of GaInAsP/InP DFB Lasers Consisting of Quantum-Wire Active Regions
2005-01-01
1296744 byte
Conference paper
Electronic Resource
English
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