Strain-induced effects on the performance of AlGalnP Visible Lasers

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Strain-induced effects on the performance of AlGalnP Visible Lasers

Strain-induced effects on the performance of AlGalnP Visible Lasers

Hashimoto, J. / Katsuyama, T. / Shinkai, J. / Yoshida, I. / Hayashi, H.

We investigated strain-induced effects on the lasing condition of a strained AlGalnP laser in comparison with an unstrained device having similar band structure. Clear reduction in the threshold current density was observed by incorporating the strained quantum well structure.

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Title :

Strain-induced effects on the performance of AlGalnP Visible Lasers

Contributors:

Hashimoto, J. (author) / Katsuyama, T. (author) / Shinkai, J. (author) / Yoshida, I. (author) / Hayashi, H. (author)

Published in:

13th IEEE International Semiconductor Laser Conference ; 180-181

Publication date :

1992-01-01

Size :

165729 byte

ISBN :

DOI :

https://doi.org/10.1109/ISLC.1992.763627

Type of media :

Conference paper

Type of material :

Electronic Resource

Language :

English

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