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    Metal-semiconductor-metal travelling wave-photodetectors

    Metal-semiconductor-metal travelling wave-photodetectors


    Summary form only given. The bandwidth/efficiency of traditional vertically-illuminated metal-semiconductor-metal (MSM) photodetectors are limited by the RC time constant, the carrier drift time, and the carrier recombination time. In order to shorten the carrier transit/recombination time, 25 nm finger spacing has been fabricated by using high resolution e-beam lithography on low-temperature (LT) GaAs.

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    Title :

    Metal-semiconductor-metal travelling wave-photodetectors

    Contributors:
    Jin-Wei Shi, (author) / Chi-Kuang Sun, (author) / Ying-Jay Yang, (author)
    Published in:

    Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Edition. CLEO '99. Conference on Lasers and Electro-Optics (IEEE Cat. No.99CH37013) ; 256-257

    Publication date :

    1999-01-01

    Size :

    302244 byte

    ISBN :

    1-55752-595-1

    DOI :

    https://doi.org/10.1109/CLEO.1999.834155

    Type of media :

    Conference paper

    Type of material :

    Electronic Resource

    Language :

    English

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