Continuous-wave (CW) light output powers of 87 mW at room temperature and 30 mW at 60/spl deg/C have been obtained for ZnCdSe/ZnSSe/ZnMgSSe single quantum-well (SQW) separate-confinement heterostructure (SCH) laser diodes grown on a GaAs substrate by molecular beam epitaxy (MBE).


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    Title :

    High-power continuous-wave operation of 512-nm ZnCdSe/ZnSSe/ZnMgSSe SQW-SCH laser diodes


    Contributors:
    Nakayama, N. (author) / Taniguchi, S. (author) / Hino, T. (author) / Nakano, K. (author) / Ishibashi, A. (author)


    Publication date :

    1996-01-01


    Size :

    165313 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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