Laser-induced processes of element deposition from iron carbonyl (Fe(CO)/sub 5/) vapors under the action of KrF-laser radiation on SiO/sub 2/ and Ar/sup +/-laser radiation on Si were investigated. It was found out that atomic concentration of C atoms is more than it for O atoms in deposited films while acting KrF-laser radiation owing to existence of dissociative chemisorption process of CO molecules when binding energy C-O from 11 eV in gas phase is being reduced up to 2 eV for adsorbed CO molecules. Kinetics data of atomic concentrations demonstrated that during of the initial stage of element deposition content of deposited films reflects mainly chemical processes on the substrate surface and as irradiation time increases, the composition of films reflects mainly gas phase processes above the substrate surface.
Study of deposition kinetics of elements from iron carbonyl vapors under the action of laser radiation
2003-01-01
47581 byte
Conference paper
Electronic Resource
English
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