GaAs-based bipolar cascade InAs/InGaAs quantum dot VCSELs emitting near 1300 nm

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GaAs-based bipolar cascade InAs/InGaAs quantum dot VCSELs emitting near 1300 nm

GaAs-based bipolar cascade InAs/InGaAs quantum dot VCSELs emitting near 1300 nm

Lott, J.A. / Stintz, A. / Kovsh, A.R. / Ledentsov, N.N.

This study presents the design and performance of self-assembled quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) in a bipolar cascade configuration. The experimental VCSELs are grown by molecular beam epitaxy and consist of highly reflective Al/sub x/Ga/sub 1-x/As (x = 0.0 and x = 0.9) doped DBR mirrors on a GaAs substrate, surrounding a GaAs-based microcavity active region containing stacks of InAs/InGaAs QDs.

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Title :

GaAs-based bipolar cascade InAs/InGaAs quantum dot VCSELs emitting near 1300 nm

Contributors:

Lott, J.A. (author) / Stintz, A. (author) / Kovsh, A.R. (author) / Ledentsov, N.N. (author)

Published in:

2005 IEEE LEOS Annual Meeting Conference Proceedings ; 533-534

Publication date :

2005-01-01

Size :

182726 byte

ISBN :

DOI :

https://doi.org/10.1109/LEOS.2005.1548114

Type of media :

Conference paper

Type of material :

Electronic Resource

Language :

English

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