We report on the lasing properties of SC 5-layered Q-wire lasers with wire width of 23 nm. The spontaneous emission efficiency below the threshold was almost comparable to that of the Q-film lasers up to 85 C, that revealed low-damage property of the etched/regrown interfaces.
1.5 /spl mu/m wavelength GaInAsP/InP 5-layered quantum-wire lasers fabricated by CH/sub 4//H/sub 2/ dry etching and regrowth
2001-01-01
223705 byte
Conference paper
Electronic Resource
English
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