1.5 /spl mu/m wavelength GaInAsP/InP 5-layered quantum-wire lasers fabricated by CH/sub 4//H/sub 2/ dry etching and regrowth

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1.5 /spl mu/m wavelength GaInAsP/InP 5-layered quantum-wire lasers fabricated by CH/sub 4//H/sub 2/ dry etching and regrowth

1.5 /spl mu/m wavelength GaInAsP/InP 5-layered quantum-wire lasers fabricated by CH/sub 4//H/sub 2/ dry etching and regrowth

Midorikawa, H. / Muranushi, K. / Nunoya, N. / Sano, T. / Tamura, S. / Arai, S.

We report on the lasing properties of SC 5-layered Q-wire lasers with wire width of 23 nm. The spontaneous emission efficiency below the threshold was almost comparable to that of the Q-film lasers up to 85 C, that revealed low-damage property of the etched/regrown interfaces.

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Title :

1.5 /spl mu/m wavelength GaInAsP/InP 5-layered quantum-wire lasers fabricated by CH/sub 4//H/sub 2/ dry etching and regrowth

Contributors:

Midorikawa, H. (author) / Muranushi, K. (author) / Nunoya, N. (author) / Sano, T. (author) / Tamura, S. (author) / Arai, S. (author)

Published in:

LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242) ; 2 ; 407-408 vol.2

Publication date :

2001-01-01

Size :

223705 byte

ISBN :

ISSN :

DOI :

https://doi.org/10.1109/LEOS.2001.968845

Type of media :

Conference paper

Type of material :

Electronic Resource

Language :

English

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