A novel simple IGBT model for power electronic systems EMI simulation
A novel simple IGBT model for power electronic systems EMI simulation
- New search for: Dong Zhang,
- New search for: Liang Kong,
- New search for: Xuhui Wen,
- New search for: Dong Zhang,
- New search for: Liang Kong,
- New search for: Xuhui Wen,
Insulated Gate Bipolar Transistors (IGBTs) have been widely used in power electronic systems, such as switched mode power supplies, electric vehicles' motor drives and so on. However, the high switching speed of the IGBT causes high levels of electromagnetic interference (EMI). This paper suggests a simple model with sufficient accuracy to predict the power electronics systems EMI levels. The predicted spectra of both voltage and current match the measurement results. Using the system time-domain simulation with the suggested model, the relationship between the layout of the converter and the EMI level is analyzed‥
Document information
A novel simple IGBT model for power electronic systems EMI simulation
2014-08-01
1025010 byte
Conference paper
Electronic Resource
English
Similar titles
Novel High Power IGBT Inverter for a Power Conditioning System
| British Library Conference Proceedings | 2005
Features - IGBT Model Validation
| Online Contents | 1998
| British Library Conference Proceedings | 1998
| Online Contents | 1996
Power Supply for EMU using IGBT
| British Library Conference Proceedings | 1994