High Efficiency Lattice-Matched 4J Space Solar Cells on GaAs

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High Efficiency Lattice-Matched 4J Space Solar Cells on GaAs

Aho, Arto / Hietalahti, Arttu / Guina, Mircea / Raappana, Marianna / Isoaho, Riku / Aho, Timo / Polojarvi, Ville / Tukiainen, Antti / Anttola, Elina / Makela, Severi / ... [more]

Abstract

A lattice-matched four-junction solar cell on a GaAs substrate, for space applications, is demonstrated. The solar cell incorporates MBE grown GaInP, GaAs, GaInNAsSb and GaInNAsSb junctions with band-gaps of 1.9 eV, 1.4 eV, 1.2 eV and 0.9 eV, respectively. For AMO illumination, the cell exhibited a maximum efficiency of 27%. For this performance, a high collection efficiency for the bottom cell is required. The high efficiency and current generation for the four-junction solar cell is primarily enabled by achieving a very low background doping level $(\sim 5\times 10^{14}\mathbf{cm}^{-3})$ and high charge carrier lifetimes (2–4 ns) for the GaInNAsSb bottom junction. Achieving an efficiency of 33% is deemed possible by further reduction of reflection, shadowing and transmission losses.

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Document information

Title :

High Efficiency Lattice-Matched 4J Space Solar Cells on GaAs

Contributors:

Aho, Arto (author) / Hietalahti, Arttu (author) / Guina, Mircea (author) / Raappana, Marianna (author) / Isoaho, Riku (author) / Aho, Timo (author) / Polojarvi, Ville (author) / Tukiainen, Antti (author) / Anttola, Elina (author) / Makela, Severi (author)

Published in:

2019 European Space Power Conference (ESPC) ; 1-3

Publication date :

2019-09-01

Size :

310666 byte

ISBN :

978-1-7281-3328-7 , 978-1-7281-2126-0

DOI :

https://doi.org/10.1109/ESPC.2019.8932092

Type of media :

Conference paper