The high-power operation of the lateral modes stabilized 660 nm AlGaInP laser diode (LD) with the real-refractive-index waveguide structure has been achieved. The stable lateral mode operation up to 143 mW at 70/spl deg/C is realized. This is the highest power record among the narrow stripe 660-nm LDs. This LD Is suitable for the next generation high-speed (8x-) DVD-R/RW drives necessitating 140 mW class LD.


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    Title :

    High-power, high-efficiency 660-nm laser diodes for DVD-R/RW


    Contributors:
    Yagi, T. (author) / Nishiguchi, H. (author) / Yoshida, Y. (author) / Miyashita, M. (author) / Sasaki, M. (author) / Sakamoto, Y. (author) / Ono, K. (author) / Mitsui, Y. (author)


    Publication date :

    2002-01-01


    Size :

    101838 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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