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    Influence of Oxide Aperture on the Properties of 1.3μm InAs-GaAs Quantum-Dot VCSELs

    Influence of Oxide Aperture on the Properties of 1.3μm InAs-GaAs Quantum-Dot VCSELs


    A self-consistent model comprising rate equations and thermal conduction equation is used to analyze the influence of oxide aperture on thermal properties and output power of 1.3μm InAs-GaAs quantum-dot (QD) vertical cavity surface emitting lasers (VCSELs). The results show the self-heating effect in QD VCSEL is very sensitive to the size of oxide aperture. The temperature increase at the active region of QD VCSEL is analyzed as the function of the size of oxide aperture. The highest power ~3.6mW can be achieved by modifying the diameter of aperture. It has been demonstrated that there exists an optimized size of oxide aperture for the highest output power.

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    Title :

    Influence of Oxide Aperture on the Properties of 1.3μm InAs-GaAs Quantum-Dot VCSELs

    Contributors:
    Xu, D. W. (author) / Yoon, S. F. (author) / Tong, C. Z. (author) / Fan, W. J. (author)
    Published in:

    2008 IEEE PhotonicsGlobal@Singapore ; 1-3

    Publication date :

    2008-12-01

    Size :

    192650 byte

    ISBN :

    978-1-4244-2906-6 , 978-1-4244-2905-9 , 978-1-4244-3901-0

    DOI :

    https://doi.org/10.1109/IPGC.2008.4781367

    Type of media :

    Conference paper

    Type of material :

    Electronic Resource

    Language :

    English

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