Zinc oxide as a contact material for p-GaN

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Zinc oxide as a contact material for p-GaN

Kaminska, E. / Piotrowska, A. / Barcz, A. / Golaszewska, K. / Kuchuk, A. / Szade, J. / Winiarski, A. / Wawro, A. / Jasinski, J. / Liliental-Weber, Z.

Abstract

The fabrication procedure of transparent and conducting ZnO films yielding ohmic contacts to p-GaN has been developed. The microstructure and electronic properties of p-GaN/ZnO interface were studied using atomic force and electron transmission microscopies, and X-ray photoelectron spectrometry. The observed ohmic behaviour is explained in terms of formation of a tunnelling p-GaN/ n/sup +/-ZnO junction.

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Document information

Title :

Zinc oxide as a contact material for p-GaN

Contributors:

Kaminska, E. (author) / Piotrowska, A. (author) / Barcz, A. (author) / Golaszewska, K. (author) / Kuchuk, A. (author) / Szade, J. (author) / Winiarski, A. (author) / Wawro, A. (author) / Jasinski, J. (author) / Liliental-Weber, Z. (author)

Published in:

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) ; 41-44

Publication date :

2002-01-01

Size :

421135 byte

ISBN :

0-7803-7571-8

ISSN :

1097-2137

DOI :

https://doi.org/10.1109/COMMAD.2002.1237184