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    Title :

    InGaN nanowires on silicon




    Edition :

    1. Auflage


    Publication date :

    2019


    Size :

    vi, 142 Seiten


    Remarks:

    21 cm
    Illustrationen, Diagramme
    Literaturverzeichnis: Seite 127-138



    Type of media :

    Theses


    Type of material :

    Print


    Language :

    English , German



    Classification :

    BKL:    50.94 Mikrosystemtechnik, Nanotechnologie / 33.68 Oberflächen, Dünne Schichten, Grenzflächen / 53.36 Energiedirektumwandler, elektrische Energiespeicher / 33.07 Spektroskopie




    400nm InGaN/GaN and InGaN/AlGaN multiquantum well light-emitting diodes

    Chang, S.J. / Kuo, C.H. / Su, Y.K. et al. | IEEE | 2003


    400nm InGaN/GaN and InGaN/AlGaN Multiquantum Well Light-emitting Diodes

    Chang, S. J. / Kuo, C. H. / Su, Y. K. et al. | British Library Conference Proceedings | 2003


    Effects of thermal annealing on InGaN/GaN quantum well structures with silicon doping

    Cheng, Y.-C. / Lin, E.-C. / Feng, S.-W. et al. | British Library Conference Proceedings | 2003


    Growth of InGaN quantum wells and InGaN/GaN quantum well LEDs by MOCVD

    Keller, S. / Mishra, U.K. / DenBaars, S.P. | IEEE | 1996