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    Simulation Study of the DC And AC Characteristics of an Improved InGaP/GaAs Heterostructure-Emitter Bipolar Transistor (HEBT) with an InGaP Wide Bandgap Collector

    Simulation Study of the DC And AC Characteristics of an Improved InGaP/GaAs Heterostructure-Emitter Bipolar Transistor (HEBT) with an InGaP Wide Bandgap Collector


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    Title :

    Simulation Study of the DC And AC Characteristics of an Improved InGaP/GaAs Heterostructure-Emitter Bipolar Transistor (HEBT) with an InGaP Wide Bandgap Collector

    Contributors:
    Cheng, S.-Y. (author) / Gal, M. / IEEE
    Conference:

    Conference, Optoelectronic and microelectronic materials and devices; COMMAD 2002 ; 2002 ; Sydney, Australia

    Published in:

    Optoelectronic and microelectronic materials and devices; COMMAD 2002 ; 451-454

    CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES

    Publication date :

    2002-01-01

    Size :

    4 pages

    Remarks:

    IEEE cat no 02EX601

    ISBN :

    0780375718

    ISSN :

    1097-2137

    Type of media :

    Conference paper

    Type of material :

    Print

    Language :

    English

    Keywords :

    optoelectronic materials , microelectronic materials , COMMAD , IEEE , devices

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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