InAs-Quantum-Dots-Based Light Emitting Diodes with GaNAs Strain-Compensating Layers

You are here: Homepage > Search

InAs-Quantum-Dots-Based Light Emitting Diodes with GaNAs Strain-Compensating Layers

Institute of Electrical and Electronics Engineers

Access

Access via TIB

Check availability in my library

Order at Subito €

Export, share and cite

Document information

Title :

InAs-Quantum-Dots-Based Light Emitting Diodes with GaNAs Strain-Compensating Layers

Contributors:

Institute of Electrical and Electronics Engineers

Conference:

18th, International semiconductor laser conference ; 2002 ; Garmisch-partenkirchen, Germany

Published in:

International semiconductor laser conference ; 151-152

IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE

Publication date :

2002-01-01

Size :

2 pages

ISBN :

078037598X

ISSN :

0899-9406

Type of media :

Conference paper

Type of material :

Language :

English

Keywords :

semiconductor laser , ISLC , IEEE

Kurimoto, M. / Ganapathy, S. / Zhang, X.Q. et al. | IEEE | 2002

MOCVD growth of InAs/GaAs quantum dots and laser diodes

Stewart, K. / Tan, H.H. / Wong-Leong, J. et al. | IEEE | 2004

Modeling and studying of white light emitting diodes based on CdS/ZnS spherical quantum dots

Hasanirokh, K. / Asgari, A. | British Library Online Contents | 2018

Strain-engineering of GaInAsSb overgrown layers and its effects on the optical properties of InAs/GaAs quantum dots

Salhi, A. / Alshaibani, S. / Alaskar, Y. et al. | British Library Online Contents | 2018

Strain-engineering of GaInAsSb overgrown layers and its effects on the optical properties of InAs/GaAs quantum dots

Salhi, A. / Alshaibani, S. / Alaskar, Y. et al. | British Library Online Contents | 2018

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles