Depth inhomogeneity of ZnTe, CdZnTe, ZnSe epilayers grown on (001)GaAs of MBE [3890-28]
International conference; 4th, Material science and material properties for infrared optoelectronics ; 1998 ; Kiev
1999-01-01
7 pages
Conference paper
English
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British Library Conference Proceedings | 1999
|DataCite | 1920
Influence of semiconductor structure inhomogeneity on electrophysical measurement results [3890-53]
British Library Conference Proceedings | 1999
|Effect of laser irradiation on photoconductivity of GaAs crystals [3890-72]
British Library Conference Proceedings | 1999
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