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    Isothermal vapor phase epitaxy and rf sputtering for band gap engineered HgCdTe [3179-44]

    Isothermal vapor phase epitaxy and rf sputtering for band gap engineered HgCdTe [3179-44]


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    Title :

    Isothermal vapor phase epitaxy and rf sputtering for band gap engineered HgCdTe [3179-44]

    Contributors:
    Adamiec, K. (author) / Gawron, W. (author) / Piotrowski, J. (author) / Rogalski, A. / Military University of Technology, Warsaw; Institute of Applied Physics
    Conference:

    Symposium; 12th, Solid state crystals: materials science and applications: Solid state crystals in opteolectronics and semiconductor technology ; 1996 ; Zakopane; Poland

    Published in:

    Solid state crystals: materials science and applications: Solid state crystals in opteolectronics and semiconductor technology ; 3179 ; 251-255

    PROCEEDINGS- SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING ; 3179

    Publication date :

    1996-01-01

    Size :

    5 pages

    Remarks:

    Also known as SSCs'96

    ISBN :

    0819426059

    ISSN :

    0277-786X

    Type of media :

    Conference paper

    Type of material :

    Print

    Language :

    English

    Keywords :

    solid state crystals , optoelectronics , semiconductor technology , SSC , applied physics

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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