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    Title :

    Enhanced Gallium Arsenide Metal-Semiconductor Field Effect Transistors Designed for High Temperature Operation



    Conference:

    National aerospace and electronics conference ; 1994 ; Dayton; OH



    Publication date :

    1994-01-01


    Size :

    5 pages


    Remarks:

    In 2 vols; Theme title: Technology for a global market. Also known as NAECON 1994. IEEE Cat no 94CH3431-4; See also 4362.78768 vol 9 no 9 1994 for selected reports




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




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