High-Sensitivity Detection of Water Vapor Concentration: Optimization and Performance
Visible Luminescence of SiGe/Si Quantum Wells Under an External Anisotropic Deformation
Room-Temperature 2.5 eV Pulsed Cathodoluminescence Band of High-Purity Silicon Dioxide
Strain-Induced Intrinsic Splitting of the Biexciton Ground State in SiGe/Si Quantum Wells
Structure of the Room-Temperature 2.5 eV α-Quartz Single-Crystal Pulsed Cathodoluminescence Band
Hidden Correlations and Entanglement in Single-Qudit States†