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Synonyms were used for: Lasers • Society;
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    `Miracle' Mirror that Does Not Change the Phase of Reflected Wave

    IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005
    Publisher: IEEE,
    Keywords: Lasers , Electro optics

    0.98 m Wavelength InGaAs/GaAs/AlGaAs Strained Quantum-Well Laser Diodes with High Reliability

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997
    Publisher: IEEE
    Keywords: LEOS , lasers , IEEE , electro-optics

    1.1-1.2 /spl mu/m multiple-wavelength vertical cavity surface emitting laser array with highly strained GaInAs/GaAs QWs on patterned substrate

    Arai, M. / Kondo, T. / Nishiyama, N. et al. | IEEE | 2001
    wavelength span of the multi-wavelength GaInAs/GaAs VCSEL can be expanded and we can expect a wideband WDM-LAN using the VCSEL array. ...
    Publisher: IEEE

    1.1mumRange InGaAs VCSELs for High-Speed Optical Interconnections

    IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005
    Publisher: IEEE,
    Keywords: Lasers , Electro optics

    1.2 mum Band High-density Multiple-wavelength Vertical Cavity Surface Emitting Laser Array

    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004
    Publisher: IEEE,
    Keywords: Lasers , Electro-optics , LEOS

    1.2 /spl mu/m band high-density multiple-wavelength vertical cavity surface emitting laser array

    Uchiyama, Y. / Kondo, T. / Takeda, K. et al. | IEEE | 2004
    A 1.2 /spl mu/m band densely packed VCSEL array with highly strained GaInAs/GaAs QWs with spatial spacing of 20 /spl mu/m and wavelength ...
    Publisher: IEEE

    1.3/1.55/spl mu/m WDM transceiver modules for 155Mbps application

    Uno, T. | IEEE | 2001
    modulated at around 155 Mbps are employed for ATM-PON systems and 100Base-T Ethernet signal transmission systems. Optical modules for the access ...
    Publisher: IEEE

    1.3 and 1.5 mum InP-based Vertical Cavity Surface Emitting Lasers

    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004
    Publisher: IEEE,
    Keywords: Lasers , Electro-optics , LEOS

    1.3 and 1.5 /spl mu/m InP-based vertical cavity surface emitting lasers

    Nishiyama, N. / Caneau, C. / Zah, C.-E. | IEEE | 2004
    1.3 /spl mu/m and 1.5 /spl mu/m InP-based VCSELs with AlGaInAs/InP DBR have been successfully realized. For both wavelengths, over 1 mW ...
    Publisher: IEEE

    1.3 micron In(Ga)As/GaAs Quantum-Dot Lasers and their Dynamic Properties

    IEEE | British Library Conference Proceedings | 2003
    Publisher: IEEE
    Keywords: lasers , electro-optics , IEEE , LEOS

    1.3-mum GaInNAs VCSELs for 40-Gb/s CWDM Systems

    IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005
    Publisher: IEEE,
    Keywords: Lasers , Electro optics

    1.3 mum High Density Quantum Dots Laser with Short Cavity and Cleaved Facet

    IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005
    Publisher: IEEE,
    Keywords: Lasers , Electro optics

    1.3 mum InGaAs Vertical-Cavity Surface-Emitting Lasers

    IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005
    Publisher: IEEE,
    Keywords: Lasers , Electro optics

    1.3 mum Low Threshold Al-Oxide Confined Inner Stripe (ACIS) Lasers and ACIS Laser Array

    IEEE | British Library Conference Proceedings | 1999
    Publisher: IEEE
    Keywords: LEOS , lasers , IEEE , electro-optics

    1.3mum Quantum Dot Lasers with Single and Stacked Active Layers

    IEEE | British Library Conference Proceedings | 1999
    Publisher: IEEE
    Keywords: LEOS , lasers , IEEE , electro-optics

    1.3 /spl mu/m GaAsSb resonant-cavity light-emitting diodes grown on GaAs substrate

    Jin, X. / Yu, S.-Q. / Cao, Y. et al. | IEEE | 2003
    linewidth, beam shape and characteristic temperature are demonstrated. These devices have the potential for high-speed operation and show great ...
    Publisher: IEEE

    1.3-/spl mu/m InGaAlAs MQW RWG DFB lasers for uncooled 10-Gb/s datacom applications

    Nakahara, K. / Tsuchiya, T. / Kitatani, T. et al. | IEEE | 2003
    It was experimentally demonstrated that a 1.3 /spl mu/m InGaAlAs MQW DFB RWG laser with low-resistance notch-free grating was directly ...
    Publisher: IEEE

    1.3 /spl mu/m ln(Ga)As/GaAs quantum-dot lasers and their dynamic properties

    Mao, M.-H. / Wu, T.-Y. / Chang, F.-Y. et al. | IEEE | 2003
    In(Ga)As/GaAs quantum-dot lasers with emission wavelength at 1295 nm at room temperature are fabricated. The highest relaxation oscillation ...
    Publisher: IEEE

    1.3 /spl mu/m polarization insensitive tapered waveguide mode conversion structures with mixed quantum well active regions

    Uppal, K. / Tishinin, D. / Dapkus, P.D. | IEEE | 1996
    Fiber alignment is an expensive stage in the packaging of semiconductor lasers and amplifiers. In order to reduce the cost, simpler fiber ...
    Publisher: IEEE

    1.3 m GaInAsP Lasers with Bragg Reflector Consisted of Semiconductor and Air

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997
    Publisher: IEEE
    Keywords: LEOS , lasers , IEEE , electro-optics

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