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Orientational imaging and tracking of single colloidal CdSe quantum dots by defocused microscopy

Brokmann, X. / Ehrensperger, M.V. / Hermier, J.P. et al. | IEEE | 2005

Patterned Quantum Dot Lasers Fabricated using Electron Beam Lithography and Selective Area Epitaxial Growth

IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005

Modelling quantum-dot in quasi-3D photonic crystal defect microcavity for single-photon sources

Ho, Y.-L.D. / Cao, T. / Ivanov, P.S. et al. | IEEE | 2005

We model wavelength scale III-V photonic crystal defect microcavities containing a single quantum-dot using 3-D FDTD. These microcavities ...

Enhanced phonon-assisted absorption of InGaAs quantum dots confined in a planar microcavity

Wang, X.Y. / Shih, C.K. / Zhang, J.Y. et al. | IEEE | 2005

Measurement of the Linewidth Enhancement Factor of Quantum Dot Lasers Using External Light Injection

Chu, Y. / Penty, R.V. / White, I.H. | IEEE | 2005

Threshold and Spectral Characteristics of Patterned Quantum Dot Lasers Fabricated by Selective Area Epitaxy

Elarde, V. | British Library Conference Proceedings | 2005

Investigation of transition dynamics in a quantum-dot laser optically pumped by femtosecond pulses

Rafailov, E.U. / McRobbie, A.D. / Cataluna, M.A. et al. | IEEE | 2005

We investigated the behaviour of a quantum-dot edge-emitting laser, optically pumped by femtosecond pulses. We demonstrated that pulses ...

Patterned quantum dot lasers fabricated using electron beam lithography and selective area epitaxial growth

Elarde, V.C. / Coleman, J.J. / Bryce, A.C. | IEEE | 2005

This paper demonstrates a fabrication process which allows the location and geometry of quantum dots to be explicitly defined using ...

Investigation of Transition Dynamics in a Quantum-Dot Laser Optically Pumped by Femtosecond Pulses

IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005

The Influence of p-Doping on the Temperature Sensitivity of 1.3mum Quantum Dot Lasers

IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005

Strain Induced Wavelength Shift in Self-Assembled InAs/GaAs Quantum Dots Grown by MOCVD

Liang, S. / Zhu, H. / Pan, J. | British Library Conference Proceedings | 2005

Size dependence of band gap variation and electron-phonon coupling in ZnO Quantum Dots

Wen-Feng Hsieh, / Hsin-Ming Cheng, / Kuo-Feng Lin, et al. | IEEE | 2005

Photoluminescence and resonant Raman scattering (RRS) were investigated in various sizes of ZnO quantum dots. The size dependent shift of ...

Tunable propagation delay of femtosecond pulses in a quantum-dot optical amplifier at room temperature

van der Poel, M. / Mork, J. / Hvam, J.M. | IEEE | 2005

Optically induced dispersion over a large bandwidth of 2.6 THz is used to slow or speed up a 150 fs pulse in a quantum-dot optical ...

InGaAs quantum dots-in-a-well photodetectors grown by metal organic chemical vapor deposition

Jolley, G. / Tan, H.H. / Fu, L. et al. | IEEE | 2005

The characteristics of metal organic chemical vapor deposition (MOCVD) grown InGaAs quantum dot infrared photodetectors based on the ...

Internal loss as a limiting factor for the maximum power of a quantum dot laser

Asryan, L.V. | IEEE | 2005

The free-carrier-density dependent internal loss is shown to strongly limit the output power of a quantum dot laser. The maximum optical ...

Internal Loss as a Limiting Factor for the Maximum Power of a Quantum Dot Laser

Asryan, L. | British Library Conference Proceedings | 2005

InGaAs Quantum Dots-in-a-Well Photodetectors Grown by Metal Organic Chemical Vapor Deposition

IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005

Integration of an InGaAs Quantum-Dot Laser with a Passive Waveguide using Selective-Area MOCVD

IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005

1.3 /spl mu/m high density quantum dot laser with short cavity and cleaved facet

Amano, T. / Sugaya, T. / Komori, K. | IEEE | 2005

This paper reports the characteristics of a high density quantum dot (QD) laser. This work demonstrates beyond 1.3-/spl mu/m wavelength ...

Integration of an InGaAs quantum-dot laser with a passive waveguide using selective-area MOCVD

Mokkapati, S. / Tan, H.H. / Jagadish, C. | IEEE | 2005

We present the design and operation of an InGaAs quantum-dot laser integrated with a passive waveguide. Selective-area MOCVD is used to ...

Electronic shell structure in single InAs/InGaAs quantum dots emitting at 1.3 /spl mu/m

Cade, N.I. / Gotoh, H. / Kamada, H. et al. | IEEE | 2005

Photoluminescence spectra from single In(Ga)As:Bi quantum dots in a quantum well show low-temperature emission around 1300 nm. We observe ...

High-quality-factor AlGaAs optical microcavities for atomic Cs and semiconductor quantum dot cavity QED experiments

Srinivasan, K. / Barclay, P.E. / Painter, O. et al. | IEEE | 2005

High-quality-factor (Q/spl sim/10/sup 4/-10/sup 5/) AlGaAs microdisks for atomic and semiconductor quantum dot cavity QED experiments are ...

Single photon emission from gallium nitride quantum dots at a record-short wavelength of 357 nm

Kako, S. / Hoshino, K. / Ishida, S. et al. | IEEE | 2005

We present measurements of the second-order coherence function on emission from single GaN quantum dots. A large degree of photon ...

Modified spontaneous emission and qubit entanglement from two coupled quantum dots in a photonic crystal nanocavity

Hughes, S. | IEEE | 2005

Spontaneous emission dynamics of two dipole-coupled quantum dots in a photonic crystal nanocavity are theoretically investigated. Strong ...

Transient Spectral Hole Burning Spectroscopy of Exciton Spin Flip Processes in In(Ga)As Quantum Dots

IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005

Modeling and fabrication of sub-diffraction nanophotonic waveguides constructed via DNA-directed self-assembled quantum dots

Wang, C.-J. / Lin, L.Y. / Parviz, B.A. | IEEE | 2005

We present the design, model, and preliminary fabrication results for a sub-diffraction nanophotonic waveguide composed of quantum dots ...

Ultra-thin quantum wells and fractional monolayer quantum dots of II-VI semiconductors for optoelectronic applications

Hernandez-Calderon, I. / Alfaro-Martinez, A. / Garcia-Rocha, M. | IEEE | 2005

degradation of their structural quality during the ALE growth. Fractional monolayer quantum dots (FMQDs) produced by the deposition of /spl sim/0.5 ML ...

Nanoscale Selective Area Epitaxy: Towards Lithographically Defined Quantum Dots at 1.5 mum using Direct Lithographic Patterning

IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005

Transient spectral hole burning spectroscopy of exciton spin flip processes in In(Ga)As quantum dots

Muller, T. / Strasser, G. / Unterrainer, K. | IEEE | 2005

Transient spectral hole burning measurements are performed on InAs/GaAs self-assembled quantum dots. In the case of cross-polarized pump ...

Singlemode Monolithically Quantum-Dot Vertical-Cavity Surface-Emitting Laser in 1.3mum with Side-Mode Suppression Ratio > 30dB

IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005

The influence of p-doping on the temperature sensitivity of 1.3 /spl mu/m quantum dot lasers

Masse, N.F. / Marko, I.P. / Sweeney, S.J. et al. | IEEE | 2005

We find that non-radiative recombination plays an important role in p-doped quantum-dot lasers. Along with carrier thermalisation effects ...

Ultra-Thin Quantum Wells and Fractional Monolayer Quantum Dots of II-VI Semiconductors for Optoelectronic Applications (Invited)

Hernandez-Calderon, I. / Alfaro-Martinez, A. / Garcia-Rocha, M. et al. | British Library Conference Proceedings | 2005

Numerical aperture increasing lens microscopy for high resolution and high collection efficiency spectroscopy of single quantum dots

Vamivakas, A.N. / Liu, Z. / Ippolito, S.B. et al. | IEEE | 2005

The numerical aperture increasing lens (NAIL) technique is applied to imaging and spectroscopy of single InGaAs quantum dots (QDs). Using ...

Rapid thermal annealing study of InGaAs/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition

Fu, L. / Kuffner, P. / McKerracher, I. et al. | IEEE | 2005

In this work, the effects of postgrowth rapid thermal annealing (RTA) on tuning the operating wavelength of self-assembled quantum dots ...

Effect of Gain Saturation and Nonradiative Recombination on the Thermal Characteristics of InAs/GaAs 1.3mum Quantum Dot Lasers

IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005

Rapid Thermal Annealing Study of InGaAs/GaAs Quantum Dot Infrared Photodetectors Grown by Metal-Organic Chemical Vapor Deposition

IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005

GaAs-Based InAs/InGaAs Quantum Dot Vertical Cavity and Vertical External Cavity Surface Emitting Lasers Emitting Near 1300 nm

Lott, J.A. / Kovsh, A.R. / Ledentsov, N.N. et al. | IEEE | 2005

quantum dot active regions grown on GaAs substrates that emit over 1 mW continuous wave peak power at room temperature are demonstrated. ...

Nanoscale selective area epitaxy: towards lithographically defined quantum dots at 1.5 /spl mu/m using direct lithographic patterning

Swint, R.B. / Juodawlkis, P.W. / Oakley, D.C. et al. | IEEE | 2005

Temperature-Insensitive 10 Gb/s Direct Modulation Lasers with InAs Self-Assembled Quantum Dots at 1.3 μm

Sugawara, M. / Otsubo, K. / Yamamoto, T. et al. | IEEE | 2005

Based on our design on the maximum bandwidth for high-speed modulation and p-type doping into quantum dots for high temperature stability ...

Large enhancement of fluorescence from CdSe/ZnS quantum dots induced by resonant coupling to spatially controlled surface plasmons

Shi, S. / Atay, T. / Urabe, H. et al. | IEEE | 2005

Nanoengineered fluorescent response is reported in semiconductor core-shell (CdSe/ZnS) quantum dots in proximity to the surface plasmon ...

A Master Oscillator Power Amplifier System based on External Cavity Mode-Locking of a Quantum-Dot Two-Section Diode Laser

IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005

A master oscillator power amplifier system based on external cavity mode-locking of a quantum-dot two-section diode laser

Myoung-Taek Choi, / Wangkuen Lee, / Ji-Myung Kim, et al. | IEEE | 2005

Singlemode monolithically quantum-dot vertical-cavity surface-emitting laser in 1.3 /spl mu/m with side-mode suppression ratio > 30 dB

Chang, Y.H. / Lin, G.R. / Kuo, H.C. et al. | IEEE | 2005

We present monolithically quantum-dot vertical-cavity surface-emitting laser (QD VCSELs) operating in the 1.3 /spl mu/m optical ...

Effect of gain saturation and nonradiative recombination on the thermal characteristics of InAs/GaAs 1.3 /spl mu/m quantum dot lasers

Marko, I.P. / Masse, N. / Sweeney, S.J. et al. | IEEE | 2005

The Impact ofAlGaAs Cladding Layers Grown at Low Temperature on the Performance of MOCVD based InAs/GaAs Quantum Dot Laser Diodes

IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005

Static and Dynamic Measurements of the Henry Factor of 5 Quantum-Dot Layer Single Mode Lasers Emitting at 1.3mum on GaAs

Martinez, A. | British Library Conference Proceedings | 2005

Size and Density Control of InAs Quantum Dots by Selective MOVPE Growth Employing Stripe Mask Array and Composition-Varied GaInAs Layer

IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005

Experimental observation of the magnitude and sign of the third order optical nonlinearity in CdS quantum dots in a dendrimer matrix

Etienne, M. / Walser, A.D. / Dorsinville, R. et al. | IEEE | 2005

We have investigated the nonlinear optical response of CdS quantum dots in a poly(propyleneimine) dendrimer matrix having diaminobutane ...

size and density control of InAs quantum dots by selective MOVPE growth employing stripe mask array and composition-varied GaInAs layer

Yamauchi, Y. / Kawakita, Y. / Okamoto, S. et al. | IEEE | 2005

Selective MOVPE growth of self-assembled InAs quantum dots (QDs) using a SiO/sub 2/ narrow stripe mask array and composition-varied GaInAs ...

The impact of AlGaAs cladding layers grown at low temperature on the performance of MOCVD based InAs/GaAs quantum dot laser diodes

Sears, K. / Buda, M. / Tan, H.H. et al. | IEEE | 2005

Effects of Strain and Barrier Height of Thin Interlayer on InAs Quantum Dots Grown on GaInAsP/InP (100) by Metalorganic Chemical Vapor Deposition

IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005