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Ishida, M.   Physics   English   Clear all

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    Temperature-Insensitive 10 Gb/s Direct Modulation Lasers with InAs Self-Assembled Quantum Dots at 1.3 μm

    Sugawara, M. / Otsubo, K. / Yamamoto, T. et al. | IEEE | 2005
    Based on our design on the maximum bandwidth for high-speed modulation and p-type doping into quantum dots for high temperature stability ...

    Measurement and evaluation of chirp and linewidth enhancement factor of a 1.3 /spl mu/m quantum dot laser

    Hatori, N. / Ishida, M. / Ebe, H. et al. | IEEE | 2004
    We measured chirp of quantum dot lasers under 5 Gb/s direct-modulation, and the chirp was less than 2 GHz. From the results and some ...

    Design of high-speed directly-modulated self-assembled quantum-dot lasers aiming at 40 Gb/s operation: experiments and model

    Ishida, M. / Hatori, N. / Akiyama, T. et al. | IEEE | 2004
    Modulation characteristics of 1.3 /spl mu/m quantum-dot lasers were investigated experimentally and theoretically to evaluate the K-factor ...

    1.28 /spl mu/m InAs/GaAs quantum dot lasers with AlGaAs cladding layer grown at low temperature by metalorganic chemical vapor deposition

    Tatebayashi, J. / Hatori, N. / Ishida, M. et al. | IEEE | 2004
    This work reports the long-wavelength lasing of self-assembled InAs quantum dot lasers with AlGaAs cladding layer grown by MOCVD. By ...

    CW lasing of self-assembled InAs quantum dot lasers on GaAs substrates grown by metalorganic chemical vapor deposition

    Tatebayashi, J. / Kakuma, H. / Hatori, N. et al. | British Library Conference Proceedings | 2003

    CW lasing of self-assembled InAs quantum dot lasers on GaAs substrates grown by metalorganic chemical vapour deposition

    Tatebayashi, J. / Kakuma, H. / Hatori, N. et al. | IEEE | 2003
    We report the fabrication and laser characteristics of self-assembled InAs quantum dot lasers on GaAs substrates grown by metalorganic ...

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