Optically pumped intersubband electron Raman lasers [2886-501]
Far-field control of vertical cavity surface emitting lasers [2886-521]
High-power 980-nm strained InGaAs/AlGaAs/GaAs quantum well laser [2886-570]
1.48-m InGaAs/InGaAsP separated confinement strained layer multiple quantum well lasers [2886-559]
High-performance 1.3-m laser diode by LP-MOVPE [2886-560]
Coupled mode analysis of second order loss-coupled DFB lasers [2886-514]
Wafer bonding technique for fabricating 1.5-m InGaAs/InGaAsP pillar-free microdisk lasers [2886-548]
Intersubband lasing in silicon-based multiple quantum wells [2886-502]
Studies of self-locking high-speed double photon switch [2886-571]
Evaluations of As-fabricated GaN-based light-emitting diodes [2886-508]
AlInGaAs/AlGaAs strained material and strained quantum well lasers grown by MBE [2886-553]
Laser diode in a coherent resolved interferometer [2886-551]
The Character Recognition Approach Using Novel Decision Tree Based on the Backpropagation Network
Some New Concepts and Problems in Structural Wave Control
Calculation of Boundary Layer Considering Free-Surface Effect Around Ship Hulls