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Cheng, Y.-C.   Chemistry   Electrical engineering   Print   Clear all
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    Two-Component Photoluminescence Decay and Carrier Localization in InGaN/GaN Multiple Quantum Well Structures

    Feng, S.-W. / Cheng, Y.-C. / Yang, C. C. et al. | British Library Conference Proceedings | 2001

    Microstructure Studies of InGaN/GaN Multiple Quantum Wells

    Lin, Y.-S. / Hsu, C. / Ma, K.-J. et al. | British Library Conference Proceedings | 2001

    Femtosecond pump-probe studies on carrier dynamics in InGaN/GaN quantum wells with indium aggregated quantum dot structures

    Wang, H.-C. / Tsai, C.-Y. / Cheng, Y.-C. et al. | British Library Conference Proceedings | 2003

    Quantum dot structures and their optical properties of a high-indium InGaN film

    Feng, S.-W. / Lin, E.-C. / Cheng, Y.-C. et al. | British Library Conference Proceedings | 2003

    Effects of thermal annealing on InGaN/GaN quantum well structures with silicon doping

    Cheng, Y.-C. / Lin, E.-C. / Feng, S.-W. et al. | British Library Conference Proceedings | 2003

    Dependencies of optical and material properties on nominal indium content and well width in InGaN/GaN quantum well structures

    Tang, T.-Y. / Teng, C.-C. / Lin, S.-C. et al. | British Library Conference Proceedings | 2003

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